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M5M5256DRV-10VXL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

M5M5256DRV-10VXL-I Features

* CMOS STATIC RAM POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol Vcc (PD) VI (/S) Icc (PD) (Ta = -40~85°C, Vcc=2.7~3.6V, unless otherwise noted) Parameter Power down supply voltage Chip select input /S Power down supply current Test conditions Min 2 2 -VLL -VXL Limits Typ Max

M5M5256DRV-10VXL-I General Description

The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small eno.

M5M5256DRV-10VXL-I Datasheet (44.19 KB)

Preview of M5M5256DRV-10VXL-I PDF

Datasheet Details

Part number:

M5M5256DRV-10VXL-I

Manufacturer:

Mitsubishi

File Size:

44.19 KB

Description:

262144-bit (32768-word by 8-bit) cmos static ram.
'97.4.7 MITSUBISHI LSIs M5M5256DFP,VP,RV -10VLL-I,-12VLL-I,-15VLL-I, -10VXL-I,-12VXL-I,-15VXL-I 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DE.

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TAGS

M5M5256DRV-10VXL-I 262144-BIT 32768-WORD 8-BIT CMOS STATIC RAM Mitsubishi

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