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M5M5256DRV-10VXL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

M5M5256DRV-10VXL Features

* (Ta = 0~70°C, Vcc=2.7~3.6V, unless otherwise noted) Parameter Power down supply voltage Chip select input /S Power down supply current Test conditions Min 2 2 -VLL -VXL Limits Typ Max Unit V V Vcc = 3V,/S≥Vcc-0.2V, Other inputs=0~Vcc (Note 7) 10 2 uA 0.05 (Note 8) Note7: ICC (PD) = 1uA

M5M5256DRV-10VXL General Description

The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small eno.

M5M5256DRV-10VXL Datasheet (63.03 KB)

Preview of M5M5256DRV-10VXL PDF

Datasheet Details

Part number:

M5M5256DRV-10VXL

Manufacturer:

Mitsubishi

File Size:

63.03 KB

Description:

262144-bit (32768-word by 8-bit) cmos static ram.

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M5M5256DRV-10VXL 262144-BIT 32768-WORD 8-BIT CMOS STATIC RAM Mitsubishi

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