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MGF1601B-01 Datasheet - Mitsubishi

High-power GaAs FET

MGF1601B-01 Features

* High linear power gain Glp=8.0dB @f=8GHz

* High P1dB P1dB=21.8dBm(TYP.) @f=8GHz APPLICATION

* S to X Band medium-power amplifiers and oscillators QUALITY

* GG RECOMMENDED BIAS CONDITION

* VDS=6V,Id=100mA Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Pa

MGF1601B-01 Datasheet (322.56 KB)

Preview of MGF1601B-01 PDF

Datasheet Details

Part number:

MGF1601B-01

Manufacturer:

Mitsubishi

File Size:

322.56 KB

Description:

High-power gaas fet.

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MGF1601B-01 High-power GaAs FET Mitsubishi

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