MGF1601B-01 High-power GaAs FET

Mitsubishi

Description

< High-power GaAs FET (small signal gain stage) > MGF1601B-01 S to X BAND / 0.15W non - matched .
The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.

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Datasheet Specifications

Part number: MGF1601B-01
Manufacturer: Mitsubishi
File Size: 322.56 KB
Datasheet: MGF1601B-01-Mitsubishi.pdf
Description: High-power GaAs FET

Features

* High linear power gain Glp=8.0dB @f=8GHz

MGF1601B-01 Distributors

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MGF1601B-01 High-power GaAs FET Mitsubishi

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