MGF1601B Datasheet (Mitsubishi) - MICROWAVE POWER GaAs FET

MGF1601B, MICROWAVE POWER GaAs FET

The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.

The hermetically sealed metalceramic for microstrip circuits.

package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN.

1 Unit:

MGF1601B Features

* High output power at 1dB gain compression P1dB=21.8dBm(TYP.)

* High linear power gain GLP=8dB(TYP.) @f=8GHz 0.5±0.15 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.5±0.2 3 QUALITY GRADE

* GG RECOMMENDED BIAS CONDITIONS

* VDS=6V