MGF1601B MICROWAVE POWER GaAs FET

Mitsubishi

Description

MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET .
The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.

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Datasheet Specifications

Part number: MGF1601B
Manufacturer: Mitsubishi
File Size: 26.03 KB
Datasheet: MGF1601B_MitsubishiElectricSemiconductor.pdf
Description: MICROWAVE POWER GaAs FET

Features

* High output power at 1dB gain compression P1dB=21.8dBm(TYP. )

MGF1601B Distributors

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MGF1601B MICROWAVE POWER GaAs FET Mitsubishi

Mitsubishi MGF1601B-like datasheet