MGF1601B

MICROWAVE POWER GaAs FET

Mitsubishi

Image	Manufacturer	P/N	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Mitsubishi Electric	MGF1601B	MGF1601B01	Electronic Component	ComSIT USA	200	0	$0

Download Datasheet (26.03 KB)

MGF1601B Datasheet Preview — Preview of MGF1601B Datasheet

Datasheet Details

Part number:

MGF1601B

Manufacturer:

Mitsubishi

File Size:

26.03 KB

Description:

Microwave power gaas fet.
MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medi.
The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X b.

✔ MGF1601B Features

High output power at 1dB gain compression P1dB=21.8dBm(TYP.)
High linear power gain GLP=8dB(TYP.) @f=8GHz 0.5±0.15 @f=8GHz 2 2 APPLICATION S to X band medium-powe

📁 Related Datasheet

MGF1601 - MICROWAVE POWER GaAs FET (Mitsubishi Electric)

MGF1601B-01 - High-power GaAs FET (Mitsubishi)

MGF1202 - GaAs FET (Mitsubishi)

MGF1302 - LOW NOISE GaAs FET (Mitsubishi)

MGF1303B - LOW NOISE GaAs FET (Mitsubishi)

MGF1304A - for Microwave Low-Noise Amplifiers N-Channel Schottky Barrier Gate Type (Mitsubishi Electric)

MGF1305 - Microwave Low Noise Amplifier (Mitsubishi Electric)

MGF1323 - Low Noise GaAs FET (Mitsubishi)

TAGS

MGF1601B MICROWAVE POWER GaAs FET Mitsubishi

Datasheet Details

File Size:

Description:

✔ MGF1601B Features

MGF1601B Distributor