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MGF1601B MICROWAVE POWER GaAs FET

MGF1601B Description

MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET .
The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.

MGF1601B Features

* High output power at 1dB gain compression P1dB=21.8dBm(TYP. )

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MICROWAVE POWER GaAs FET Mitsubishi
Mitsubishi MGF1601B-like datasheet