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MGF1801B - MICROWAVE POWER GaAs FET

MGF1801B Description

MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET .
The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.

MGF1801B Features

* High output power at 1dB gain compression P1dB=23dBm(TYP. )
* High linear power gain GLP=9dB(TYP. )

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MICROWAVE POWER GaAs FET Mitsubishi
Mitsubishi MGF1801B-like datasheet