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MGF1801BT - High-power GaAs FET

MGF1801BT Description

< High-power GaAs FET (small signal gain stage) > MGF1801BT S to X BAND / 0.2W non - matched .
The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.

MGF1801BT Features

* High linear power gain Glp=9.0dB @f=8GHz
* High P1dB P1dB=23dBm(TYP. ) @f=8GHz

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High-power GaAs FET Mitsubishi
Mitsubishi MGF1801BT-like datasheet