MGF1801BT Datasheet (Mitsubishi) - High-power GaAs FET

MGF1801BT, High-power GaAs FET

The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.

The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.

The MGF1801BT is mounted in th

MGF1801BT Features

* High linear power gain Glp=9.0dB @f=8GHz

* High P1dB P1dB=23dBm(TYP.) @f=8GHz

* High reliability and stability APPLICATION

* S to X Band medium-power amplifiers and oscillators QUALITY

* IG RECOMMENDED BIAS CONDITION

* VDS=6V,Id=100mA Absolute maximum ratings (Ta=25C)