MGF1801BT Datasheet - Mitsubishi

MGF1801BT High-power GaAs FET

The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. The MGF1801BT is mounted in th.

MGF1801BT Features

* High linear power gain Glp=9.0dB @f=8GHz

* High P1dB P1dB=23dBm(TYP.) @f=8GHz

* High reliability and stability APPLICATION

* S to X Band medium-power amplifiers and oscillators QUALITY

* IG RECOMMENDED BIAS CONDITION

* VDS=6V,Id=100mA Absolute maximum ratings (Ta=25C)

MGF1801BT Datasheet (109.64 KB)

MGF1801BT Datasheet Preview — Preview of MGF1801BT PDF

Datasheet Details

Part number:

MGF1801BT

Manufacturer:

Mitsubishi

File Size:

109.64 KB

Description:

High-power gaas fet.

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MGF1801BT High-power GaAs FET Mitsubishi

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