ML101U29 Key Features
- High Output Power: 400mW (Pulse)
- High Efficiency: 0.97W/A (typ.)
- Visible Light: 660nm (typ.)
- Low Aspect Ratio (θ⊥ / θ//): 1.5 (typ.)
- Low Astigmatic Distance: ≦1µm (typ.)
- Part: ML101U29
- Manufacturer: Mitsubishi Electric
- Size: 321.53 KB
Related Mitsubishi Electric Datasheets
| Part Number | Description |
|---|---|
| ML1012R | a high power AlGaInP semiconductor laser |
| ML1013R | a high power AlGaInP semiconductor laser |
| ML1016R | a high power AlGaInP semiconductor laser |
| ML101J10 | a high power AlGaInP semiconductor laser |
| ML101J14 | a high power AlGaInP semiconductor laser |
ML101U29 Description
ML1XX29 is a high-power, high-efficient AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 660nm and standard pulse light output of 400mW. ML1XX29 has a real-index-waveguide which improves the slope efficiency (reduction of the operating current) and the astigmatic distance. Also, ML1XX29 has a window-mirror-facet which improves the maximum output...