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S20T100CB Dual Schottky Barrier Power Rectifiers

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Description

MOSPEC Switchmode Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature oper.

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Datasheet Specifications

Part number
S20T100CB
Manufacturer
Mospec Semiconductor
File Size
130.52 KB
Datasheet
S20T100CB-MospecSemiconductor.pdf
Description
Dual Schottky Barrier Power Rectifiers

Features

* *Low Forward Voltage. *Low Switching noise. *High Current Capacity *Guarantee Reverse Avalanche. *Guard-Ring for Stress Protection. *Low Power Loss & High efficiency. *175℃ Operating Junction Temperature *Low Stored Charge Majority Carrier Conduction. *Plastic Material used Carries Underwriters Labo

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