S2000 Datasheet - Toshiba

S2000 Silicon NPN Transistor

S2000 Features

* . High Voltage : VCES=1500V . Low Saturation Voltage : VcE(sat)=5V (Max.) . Fall Time : t f =0.7/ts (Typ.) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 03.6±

S2000 Datasheet (82.47 KB)

S2000 Datasheet Preview — Preview of S2000 PDF

Datasheet Details

Part number:

S2000

Manufacturer:

Toshiba ↗

File Size:

82.47 KB

Description:

Silicon npn transistor.

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S2000 Silicon NPN Transistor Toshiba

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