*Ultra Low Forward Voltage. *Low Switching noise. *High Current Capacity *Low Power Loss & High efficiency. *150℃ Operating Junction Temperature *Low Stored Charge Majori
S30D45, Mospec Semiconductor
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit.
S30D40, Mospec Semiconductor
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit.
S30D100, Mospec Semiconductor
MOSPEC
Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry feature.
S30D100C, MOSPEC
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epi.
S30D100PT, Compact Technology
Schottky Barrier Rectifier
FEATURES
• Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency op.