Part number:
S30D40C
Manufacturer:
WON-TOP
File Size:
42.70 KB
Description:
30a dual schottky barrier rectifier.
* Schottky Barrier Chip H
* Guard Ring for Transient Protection
* Low Forward Voltage Drop
* Low Power Loss, High Efficiency
* High Surge Current Capability
* Epoxy Meets UL 94V-0 Classification
* Ideally Suited for Use in High Frequency SJ RK PIN1 2 3 SMPS, Inverter
S30D40C
WON-TOP
42.70 KB
30a dual schottky barrier rectifier.
📁 Related Datasheet
S30D40 - SCHOTTKY BARRIER RECTIFIERS
(Mospec Semiconductor)
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit.
S30D45 - SCHOTTKY BARRIER RECTIFIERS
(Mospec Semiconductor)
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit.
S30D45C - 30A DUAL SCHOTTKY BARRIER RECTIFIER
(WON-TOP)
® WON-TOP ELECTRONICS
S30D30C – S30D100C
30A DUAL SCHOTTKY BARRIER RECTIFIER
Pb
Features
Schottky Barrier Chip
H
Guard Ring for Transient Pro.
S30D45CL - Schottky Barrier Rectifiers
(Mospec Semiconductor)
MOSPEC
Switchmode Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with high temperature operation metal. The properitary barrie.
S30D100 - SCHOTTKY BARRIER RECTIFIERS
(Mospec Semiconductor)
MOSPEC
Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry feature.
S30D100C - 30A DUAL SCHOTTKY BARRIER RECTIFIER
(WON-TOP)
® WON-TOP ELECTRONICS
S30D30C – S30D100C
30A DUAL SCHOTTKY BARRIER RECTIFIER
Pb
Features
Schottky Barrier Chip
H
Guard Ring for Transient Pro.
S30D100C - Schottky Barrier Rectifiers
(MOSPEC)
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epi.
S30D100PT - SCHOTTKY BARRIER RECTIFIERS
(Compact Technology)
Schottky Barrier Rectifier
FEATURES
• Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency op.