4N35 Datasheet (Motorola Inc) - 6-Pin DIP Optoisolators

4N35, 6-Pin DIP Optoisolators

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N35/D GlobalOptoisolator™ 6-Pin DIP Optoisolators Transistor Output The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

Current Transfer Ratio 100% Minimum @ Specified Conditions Guaranteed Switching Speeds Meets or Exceeds all JEDEC Registered Specifications To order devices that

4N35 Features

* s any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not