BD778 Datasheet - Motorola Inc

BD778 Plastic Darlington Complementary Silicon Power Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD777/D Plastic Darlington Complementary Silicon Power Transistors . . . designed for general purpose amplifier and high speed switching applications. High DC Current Gain hFE = 1400 (Typ) @ IC = 2.0 Adc Collector Emitter Sustaining Voltage @ 10 mAdc VCEO(sus) = 45 Vdc (Min) BD776 VCEO(sus) = 60 Vdc (Min) BD777, 778 VCEO(sus) = 80 Vdc (Min) BD780 R.

BD778_MotorolaInc.pdf