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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BF421/D
High Voltage Transistors
PNP Silicon
COLLECTOR 2 3 BASE 1 EMITTER
BF421 BF423
1 2 3
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD BF421 –300 –300 –5.0 –500 625 5.0 1.5 12 – 55 to +150 BF423 –250 –250 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
CASE 29–04, STYLE 14 TO–92 (TO–226AA)
PD
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.
BF421 Datasheet
