MHL21336N Datasheet (Motorola Semiconductor)

MHL21336N, RF Linear LDMOS Amplifier

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHL21336N Rev.

7, 8/2006 3G Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the 3G frequency band.

A silicon FET Class A design provides outstanding linearity and gain.

In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.

Third Order Intercept: 45 dBm Typ Power Gain:

MHL21336N Features

* Excellent Phase Linearity and Group Delay Characteristics

* Ideal for Feedforward Base Station Applications

* N Suffix Indicates Lead - Free Terminations MHL21336N 2110 - 2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum