MRF6V2150NB - RF Power Field Effect Transistor
(Motorola Semiconductor)
..
Freescale Semiconductor Technical Data
Document Number: Order from RF Marketing Rev. 6, 10/2006
RF Power Field - Effect Transis.
MRF6V2150NBR1 - RF Power FET
(Freescale Semiconductor)
Freescale Semiconductor Technical Data
RF Power Field--Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large.
MRF6V2150NR1 - RF Power FET
(Freescale Semiconductor)
Freescale Semiconductor Technical Data
RF Power Field--Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large.
MRF6V2010GN - RF Power FET
(NXP)
NXP Semiconductors Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--sign.
MRF6V2010N - RF Power FET
(NXP)
NXP Semiconductors Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--sign.
MRF6V2010NB - RF Power FET
(NXP)
NXP Semiconductors Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--sign.