MRF6V2150N - RF Power Field Effect Transistor

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Motorola Semiconductor

Datasheet Details

Part number	MRF6V2150N
Manufacturer	Motorola Semiconductor
File Size	346.73 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF6V2150N Datasheet
Additional preview pages of the MRF6V2150N datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain — 25.

Published: Nov 14, 2006 |