MRF6V2150N RF Power Field Effect Transistor

Motorola Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev.6, 10/2006 RF Power Field - Effect Transis.

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Datasheet Specifications

Part number: MRF6V2150N
Manufacturer: Motorola Semiconductor
File Size: 346.73 KB
Datasheet: MRF6V2150N_MotorolaSemiconductor.pdf
Description: RF Power Field Effect Transistor

Applications

* with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
* Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain
* 25.5 dB Drain Efficiency
* 69%
* Capable

MRF6V2150N Distributors

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MRF6V2150N Power Field Effect Transistor Motorola Semiconductor

Motorola Semiconductor MRF6V2150N-like datasheet