MRF6V2150N Datasheet (Motorola Semiconductor) - RF Power Field Effect Transistor

MRF6V2150N, RF Power Field Effect Transistor

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev.

6, 10/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications with frequencies up to 450 MHz.

Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Wat

MRF6V2150N Features

* ctor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey a