Datasheet4U Logo Datasheet4U.com

2N1981 Datasheet - Motorola

2N1981 PNP germanium power transistors

1970 2N (GERMANIUM) 2N 1980 thru 2N 1982 ~ i J~I CASE 5 (T0-36) PNP germanium power transistors for general purpose amplifier and switching applications. MAXIMUM RATINGS Rating Collector- Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Symbol vCB VCEO VEB 2N1970 100 50 40 2N1980 50 30 20 2N1981 70 40 20 Collector Current IC Power Dissipation at TC = 250 C PD Junction Temperature Range TJ IS 170 -65 to +110 ELECTRICAL CHARACTERISTICS (TA = 2SOC unless otherwise note.

2N1981 Datasheet (59.07 KB)

Preview of 2N1981 PDF

Datasheet Details

Part number:

2N1981

Manufacturer:

Motorola

File Size:

59.07 KB

Description:

Pnp germanium power transistors.

📁 Related Datasheet

2N1980 PNP germanium power transistors (Motorola)

2N1982 PNP germanium power transistors (Motorola)

2N1983 NPN silicon annular small-signal transistor (Motorola)

2N1983 Small Signal Transistors (Central Semiconductor)

2N1984 NPN silicon annular small-signal transistor (Motorola)

2N1984 Small Signal Transistors (Central Semiconductor)

2N1985 Small Signal Transistors (Central Semiconductor)

2N1986 Small Signal Transistors (Central Semiconductor)

TAGS

2N1981 PNP germanium power transistors Motorola

2N1981 Distributor