2N3303
2N3303 is NPN silicon annular transistor manufactured by Motorola Semiconductor.
2N3303 (SILICON)
NPN silicon annular transistor designed for highspeed, high-current switching and driving applications.
CASE 94 Collector connected to case MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector-Emitter Voltage
VCEO
Vdc
Collector-Base Voltage
Vdc
Emitter-Base Voltage
4.0 Vdc
Collector Current-Continuous
Total Device Dissipation @ TA =25"C
Derate above 25°C
Total Device Dissipation @ TC =25°C
Derate above 25 °C
Operating and Storage Junction Temperature Range
Adc
PD PD TJ , Tstg
0.6 Watt 3.43 m W/"C
3.0 Watts
17.2 m W/"C
-65 to
°c
+200
ELECTRICAL CHARACTERISTICS ITA = 250C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(Ie Collector-Emitter Voltage- = 30 m Ade, IB = 0)
Collector-Base Breakdown Voltage (IC = 0.5 m Ade, IE = 0)
('E Ie Emitter-Base Breakdown Voltage = O. 1 m Ade, =0)
Collector Cutclff Current- (VCE = 15 Vde, VBE = 0)
Base Current (Ve E = 15 Vde, VBE = 0)
.Pulse Test: Pulse Width = 300 /LS, Duty Cycle :S....
