2N3307 - GENERAL PURPOSE TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N3307
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	54.71 KB
Description	GENERAL PURPOSE TRANSISTOR
Datasheet	2N3307 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N3307 2N3308 vCEO V CES VCBO 35 40 40 25 30 30 VEBO 'C PD 3.0 50 200 1.14 pd TJ. Tstg 300 1.71 - 65 to + 200 Unit Vdc Vdc Vdc Vdc mAdc mW mW/°C mW mW/°C °C 2N3307 2N3308 CASE 20, STYLE 10 TO-72 (TO-206AF) GENERAL PURPOSE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage . (Ic = 2.