| Part number | 2N3303 |
|---|---|
| Datasheet | 2N3303-Motorola.pdf |
| File Size | 108.18 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | NPN silicon annular transistor |
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2N3303 (SILICON) NPN silicon annular transistor designed for highspeed, high-current switching and driving applications. 1 mAde, =0) Collector Cutclff Current· (VCE = 15 Vde, VBE = 0) Base Current (VeE = 15 Vde, VBE = 0) .Pulse Test: Pulse Width = 300 /LS, Duty Cycle :S.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N3300 | GENERAL PURPOSE TRANSISTOR |
| 2N3301 | GENERAL PURPOSE TRANSISTOR |
| 2N3302 | GENERAL PURPOSE TRANSISTOR |
| 2N3304 | PNP silicon annular transistor |
| 2N3307 | GENERAL PURPOSE TRANSISTOR |
| 2N3308 | GENERAL PURPOSE TRANSISTOR |
| 2N331 | PNP Transistor |
| 2N3311 | PNP germanium power transistors |
| 2N3312 | PNP germanium power transistors |
| 2N3313 | PNP germanium power transistors |
