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2N3303 (SILICON)
NPN silicon annular transistor designed for highspeed, high-current switching and driving applications.
CASE 94 Collector connected to case MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector-Emitter Voltage
VCEO
12
Vdc
Collector-Base Voltage
VCB
25
Vdc
Emitter-Base Voltage
VEB
4.0 Vdc
Collector Current-Continuous
Total Device Dissipation @ TA =25"C
Derate above 25°C
Total Device Dissipation @ TC =25°C
Derate above 25 °C
Operating and Storage Junction Temperature Range
IC
1.0
Adc
PD PD TJ , Tstg
0.6 Watt 3.43 mW/"C
3.0 Watts
17.2 mW/"C
-65 to
°c
+200
ELECTRICAL CHARACTERISTICS ITA = 250C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(Ie Collector-Emitter Voltage· = 30 mAde, IB = 0)
Collector-Base Breakdown Voltage (IC = 0.
2N3303 Datasheet
