2N4360 Datasheet (Motorola) - LOW-FREQUENCY/LOW-NOISE JFET

2N4360, LOW-FREQUENCY/LOW-NOISE JFET

2N4360 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage @Total Device Dissipation T^ = 25°C Derate above 25°C Storage Temperature Range Symbol vDs Vdg vgs Pd T stg Value 20 20 20 310 2.82 -55 to +125 Unit Vdc Vdc Vdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.! Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage dG = 10 M) Gate Reverse Current (VG S =15) Gate Source Cutoff Voltage (V DS = -10 V, Dl = 1.0 fiA) Ga