2N4351 Datasheet (Motorola)

2N4351, MOS FET

" MAXIMUM RATINGS Rating Symbol Value Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage vds vDg Vgs 25 30 30 Drain Current @Total Device Dissipation T/ = 25°C Derate above 25°C @Total Device Dissipation Trj = 25°C Derate above 25°C id Pd Pd 30 300 1.7 800 4.56 Junction Temperature Range Tj 175 Storage Temperature Range Tstg -65 to +175 'Transient potentials of ±75 Volt will not cause gate-oxide failure Unit Vdc Vdc Vdc mAdc mW mW/°C mW mW/°C °C °C 2N4351 CASE 20-