2N5109
Motorola
307.83kb
High frequency transistor.
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2N5102 - RF Power Devices
(RCA Solid State)
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2N5108 - NPN SILICON HIGH FREQUENCY TRANSISTOR
(Advanced Semiconductor)
2N5108
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz.
P.
2N5108 - HIGH FREQUENCY TRANSISTOR
(Motorola)
2N5108
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Emitter Voltage (Rbe = 10(7) Collector-Base Voltage
Emitter-Base Voltage
—Collector.
2N5108 - Silicon NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N5108
DESCRIPTION ·High Current-Gain Bandwidth Product
: fT= 1200MHz (Min) @VCE = 10V,IE = .
2N5109 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
(Microsemi Corporation)
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N5109
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Fea.
2N5109 - NPN RF TRANSISTOR
(Central Semiconductor)
2N5109
SILICON NPN RF TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar.
2N5109 - NPN SILICON HIGH FREQUENCY TRANSISTOR
(ASI)
2N5109
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
DESCRIPTION:
The 2N5109 is a High Frequency Transistor for General Purpose Amplifier.
2N5109 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
(Advanced Power Technology)
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N5109
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Fea.
2N5109 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N5109
DESCRIPTION ·High Current-Gain Bandwidth Product
: fT= 1200MHz (Min) @VCE = 10V,IE = .
2N5114 - P-CHANNEL JFETS
(Solitron Devices)
2N5114 | 2N5115 | 2N5116
P-CHANNEL JFETS - 1
KEY FEATURES
JAN/JANTX/JANTXV STANDARD PRODUCTS QUALIFIED PER MIL-PRF-19500/476F LOW ON RESISTANCE SWITC.
