Datasheet Specifications
- Part number
- 35N15E
- Manufacturer
- Motorola
- File Size
- 137.55 KB
- Datasheet
- 35N15E_Motorola.pdf
- Description
- MTW35N15E
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW35N15E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.
Features
* imally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 10000 VDS = 0 V VGS = 0 V TJ = 25°C 8000 C, CAPACITANCE (pF) 6000 Crss 4000 Ciss 2000 Crss 0 10 5 VGS 0 VDS 5 10 Coss 15 20 25 GATEApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.35N15E Distributors
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