Description
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These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.The resulting product h
Features
- Type
STB35N65M5 STF35N65M5 STI35N65M5 STP35N65M5 STW35N65M5
VDSS @ TJMAX
710 V 710 V 710 V 710 V 710 V
RDS(on) max. ID
< 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω
27 A 27 A(1) 27 A 27 A 27 A
1. Limited only by maximum temperature allowed.
- Worldwide best RDS(on).
- area.
- Higher VDSS rating.
- Excellent switching performance.
- Easy to drive.
- 100% avalanche tested.
- High dv/dt capability.
35N65M5-STMicroelectronics.pdf
