55N20E Datasheet (Motorola)

55N20E, MTY55N20E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY55N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching applications in power supplies, converters, PWM

55N20E Features

* 25°C GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data Free Datasheet http://www.0PDF.com MTY55N20E VDS , DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) VGS, GATE

* TO