* e for both DCS and TCS. 3. Transition is measured 200 mV from steady
* state voltage with load of Figure 1B. 4. This parameter is sampled and not 100% tested. WRITE CYCLE 1 A1
* A15 tAVWH A0 tA0VWH DCS/TCS (DATA/TAG ENABLE) tWLEH tWLWH WE (WRITE ENABLE) tA0VWL tAVWL D (DATA IN) tWLQ
MCM4464
Motorola
103.83 KB
1mb r4000 secondary cache fast static ram module set.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCM4464/D
MCM4464 Series 1MB R4000 Secondary Cache Fast Static RAM Module Set
Four MCM.
📁 Related Datasheet
MCM44256 4MB R4000 Secondary Cache Fast Static RAM (Motorola)
MCM44256B 4MB R4000 Secondary Cache Fast Static RAM Module Set (Motorola)
MCM44A256B 4MB R4000 Secondary Cache Fast Static RAM Module Set (Motorola)
MCM44A64 1MB R4000 Secondary Cache Fast Static RAM Module Set (Motorola)
MCM44B256B 4MB R4000 Secondary Cache Fast Static RAM Module Set (Motorola)
MCM44B64 1MB R4000 Secondary Cache Fast Static RAM Module Set (Motorola)
MCM44C256B 4MB R4000 Secondary Cache Fast Static RAM Module Set (Motorola)
MCM44C64 1MB R4000 Secondary Cache Fast Static RAM Module Set (Motorola)
MCM44D256B 4MB R4000 Secondary Cache Fast Static RAM Module Set (Motorola)
MCM44D64 1MB R4000 Secondary Cache Fast Static RAM Module Set (Motorola)
