* o the first transitioning address. 5. Transition is measured ± 200 mV from steady
* state voltage. 6. This parameter is sampled and not 100% tested. 7. At any given voltage and temperature, tWLQZ max < tWHQX min, both for a given device and from device to device. WRITE CYCLE 1 (W Controlled;
MCM6949
Motorola
122.39 KB
1m x 4 bit static random access memory.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM6949/D Advance Information MCM6949 1M x 4 Bit Static Random Access Memory The MCM.
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