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MCM69R736A 4M Late Write HSTL

MCM69R736A Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM69R736A/D Advance Information 4M Late Write HSTL The MCM69R736A/818A is a 4 megabi.
PBGA Pin Locations 4K 4L (a) 6K, 7K, 6L, 7L, 6M, 6N, 7N, 6P, 7P (b) 6D, 7D, 6E, 7E, 6F, 6G, 7G, 6H, 7H (c) 1D, 2D, 1E, 2E, 2F, 1G, 2G, 1H, 2H (d) 1K,.

MCM69R736A Features

* >
* 35 High
* Z High
* Z High
* Z High
* Z Mode Read Cycle All Bytes Write Cycle 1st Byte Write Cycle 2nd Byte Write Cycle 3rd Byte Write Cycle 4th Byte Write Cycle All Bytes Abort Write Cycle Deselect Cycle Deselect Cycle Sleep Mode MOTOROLA FAST SRAM MCM69R736A
* MCM6

MCM69R736A Applications

* The MCM69R818A organized as 256K words by 18 bits, and the MCM69R736A organized as 128K words by 36 bits wide are fabricated in Motorola’s high performance silicon gate BiCMOS technology. The differential CK clock inputs control the timing of read/write operations of the RAM. At the rising edge of

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Datasheet Details

Part number
MCM69R736A
Manufacturer
Motorola
File Size
224.39 KB
Datasheet
MCM69R736A_MotorolaInc.pdf
Description
4M Late Write HSTL

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Late Write HSTL Motorola
Motorola MCM69R736A-like datasheet