MCM69R736A Datasheet - Motorola

MCM69R736A 4M Late Write HSTL

PBGA Pin Locations 4K 4L (a) 6K, 7K, 6L, 7L, 6M, 6N, 7N, 6P, 7P (b) 6D, 7D, 6E, 7E, 6F, 6G, 7G, 6H, 7H (c) 1D, 2D, 1E, 2E, 2F, 1G, 2G, 1H, 2H (d) 1K, 2K, 1L, 2L, 2M, 1N, 2N, 1P, 2P 4F 2A, 3A, 5A, 6A, 3B, 5B, 2C, 3C, 5C, 6C, 4N, 4P, 2R, 6R, 3T, 4T, 5T 5L, 5G, 3G, 3L (a), (b), (c), (d) 4E 4M 4U 3U 5U.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM69R736A/D Advance Information 4M Late Write HSTL The MCM69R736A/818A is a 4 megabit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. The MCM69R818A organized as 256K words by 18 bits, and the MCM69R736A organized as 128K words by 36 bits wide are fabricated in Motorola’s high performance silicon gate BiCMOS technology.

MCM69R736A Features

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* 35 High

* Z High

* Z Mode Read Cycle All Bytes Write Cycle 1st Byte Write Cycle 2nd Byte Write Cycle 3rd Byte Write Cycle 4th Byte Write Cycle All Bytes Abort Write Cycle Deselect Cycle Deselect Cycle Sleep Mode MOTOROLA FAST SRAM MCM69R736A

* MCM6

MCM69R736A_MotorolaInc.pdf