MGS05N60D Datasheet - Motorola

MGS05N60D Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS05N60D/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This IGBT contains a built in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. Built In Free Wheeling Diode Built In Gate Protection Zener Diode Industry Standard Package (TO92 1.0 Watt) High Speed Eoff: T.

MGS05N60D Features

* of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a sit

MGS05N60D Datasheet (135.90 KB)