MGS13002D Datasheet (Motorola) - Insulated Gate Bipolar Transistor

MGS13002D, Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS13002D/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This IGBT contains a built in free wheeling diode and a gate protection zener.

Fast switching characteristics result in efficient operation at higher frequencies.

Built In Free Wheeling Diode Built In Gate Protection Zener Diode Industry Standard Package (TO92 1.0 Watt) High Speed Eoff: T

MGS13002D Features

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