MGSF3454VT1 Datasheet (Motorola) - N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MGSF3454VT1, N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF3454VT1/D Preliminary Information MGSF3454VT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine ™ Portfolio of devices with energy conserving traits.

These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process.

Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in sm

MGSF3454VT1 Features

* ed using the same footprint. Motorola Small

* Signal Transistors, FETs and Diodes Device Data 5 MGSF3454VT1 PACKAGE DIMENSIONS A L 6 5 1 2 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH TH