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MGSF3454XT1 N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MGSF3454XT1 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF3454XT1/D Preliminary Information MGSF3454XT1 Motorola Preferred Device Low rD.

MGSF3454XT1 Features

* package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 500 milliwatts. There are other alternatives to achieving higher power dissipation from the TSOP
* 6 package. Another alternative would be to use a ceramic substrate or

MGSF3454XT1 Applications

* are dc
* dc converters, power management in portable and battery
* powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
* Low rDS(on) Provides Higher Efficiency and Extends Battery Life
* Miniature TSOP 6 Surface Mount Package Sav

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Datasheet Details

Part number
MGSF3454XT1
Manufacturer
Motorola
File Size
138.16 KB
Datasheet
MGSF3454XT1_MotorolaInc.pdf
Description
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

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