MGSF3454XT1 Datasheet (Motorola) - N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MGSF3454XT1, N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF3454XT1/D Preliminary Information MGSF3454XT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine ™ Portfolio of devices with energy conserving traits.

These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process.

Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in sm

MGSF3454XT1 Features

* package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 500 milliwatts. There are other alternatives to achieving higher power dissipation from the TSOP

* 6 package. Another alternative would be to use a ceramic substrate or