* versus Forward Current IF r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 IC, COLLECTOR CURRENT (A) 1 IGBT DIODE 0.1 10 1 +VGE = 15 V
* VGE = 0 V RG = 150 Ω TJ = 25°C 0 200 600 800 1200 400 1000 VCE, COLLECTOR
* EMITTER VOLTAGE (V) 1400 0.01 0.1 0.001 0 10 t, TIME
MHPM7B12A120A Datasheet (245.64 KB)
MHPM7B12A120A
Motorola
245.64 KB
Hybrid power module.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHPM7B12A120A/D
Hybrid Power Module
MHPM7B12A120A
Motorola Preferred Device
Integrat.
📁 Related Datasheet
MHPM7B15A60A Hybrid Power Module (Motorola)
MHPM7B16A120B Hybrid Power Module (Motorola)
MHPM7B20A60A Hybrid Power Module (Motorola)
MHPM7B30A60B Hybrid Power Module (Motorola)
MHPM7B8A120A Hybrid Power Module (Motorola)
MHPM7A10E60DC3 Hybrid Power Module (Motorola)
MHPM7A10S120DC3 Hybrid Power Module (Motorola)
MHPM7A15A60A Hybrid Power Module (Motorola)
MHPM7A15S120DC3 Hybrid Power Module (Motorola)
MHPM7A20E60DC3 Hybrid Power Module (Motorola)
