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MJF18002 POWER TRANSISTOR

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switc.

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Datasheet Specifications

Part number
MJF18002
Manufacturer
Motorola
File Size
254.94 KB
Datasheet
MJF18002_MotorolaInc.pdf
Description
POWER TRANSISTOR

Features

* MPS) DC (MJE18002) 1.00 DC (MJF18002) 1 ms 2.5 50 µs 10 µs 1 µs I C, COLLECTOR CURRENT (AMPS) 2.0 TC ≤ 125°C IC/IB ≥ 4 LC = 500 µH 1.5 1.0 0.10 0.5 0V 0 0 VBE(off) = 0.5 V
* 1.5 V 600 800 1000 200 400 800 VCE, COLLECTOR
* EMITTER VOLTAGE (VOLTS) 1200 0.01 10 10 100 100 VCE, COLLE

Applications

* The MJE/MJF18002 have an applications specific state
* of
* the
* art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following:
* Improved Efficiency Due to Low Base Dr

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