MMBT5550 Datasheet (Motorola) - HIGH VOLTAGE TRANSISTOR

MMBT5550, HIGH VOLTAGE TRANSISTOR

MMBT5550 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) HIGH VOLTAGE TRANSISTOR NPN SILICON Refer to 2N5550 for graphs.

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Symbol vCEO vCB0 vEBO 'C THERMAL CHARACTERISTICS Characteristic Symbol "Total Device Dissipation, T^ = 25°C Derate above 25°C PD Storage Temperature T stq 'Thermal Resistance Junction to Ambient ReJA "Package mounted on 99.5% alumina 10 x