MMBT5087LT1 Datasheet - Motorola

MMBT5087LT1 Low Noise Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5087LT1/D Low Noise Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT5087LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 50 50 3.0 50 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 3 CASE 318 08, STYLE 6 SOT 23 (TO <.

MMBT5087LT1 Features

* nimize the thermal stress to which the devices are subjected.

* Always preheat the device.

* The delta temperature between the preheat and soldering should be 100°C or less.

* When preheating and soldering, the temperature of the leads and the case must not exceed the ma

MMBT5087LT1_MotorolaInc.pdf