MMBT5550LT1 Datasheet (Motorola) - High Voltage Transistors

MMBT5550LT1, High Voltage Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5550LT1/D High Voltage Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT5550LT1 MMBT5551LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 140 160 6.0 600 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 3 CASE 318 08, STYLE 6 SOT 23 (TO

MMBT5550LT1 Features

* imitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights