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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA63LT1/D
Darlington Transistors
PNP Silicon
COLLECTOR 3 BASE 1
MMBTA63LT1 MMBTA64LT1*
*Motorola Preferred Device
EMITTER 2
3
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCES VCBO VEBO IC Value –30 –30 –10 –500 Unit Vdc Vdc Vdc mAdc
1 2
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBTA63LT1 = 2U; MMBTA64LT1 = 2V
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD
MMBTA63LT1 Datasheet
