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MPSA65 / MMBTA65 / PZTA65
Discrete POWER & Signal Technologies
MPSA65
MMBTA65
C
PZTA65
C
E C B
E C B
TO-92
E
SOT-23
Mark: 2W
B
SOT-223
PNP Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
Absolute Maximum Ratings*
Symbol
VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30 30 10 1.2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
MMBTA65 Datasheet
