MMDF3P03HD Datasheet - Motorola

MMDF3P03HD Dual MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF3P03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF3P03HD Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc .

MMDF3P03HD Features

* snubbing reduces switching losses. 1000 TJ = 25°C 800 C, CAPACITANCE (pF) 600 Ciss 400 Coss 200 Crss 0

* 10

* 5.0 VGS 0 VDS 5.0 10 15 20 25 30 VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data

MMDF3P03HD_MotorolaInc.pdf