MMDFS2P102 Datasheet (Motorola) - P-Channel Power MOSFET

MMDFS2P102, P-Channel Power MOSFET

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MMDFS2P102/D FETKY™ ™ Data Sheet MMDFS2P102 P Channel Power MOSFET with Schottky Rectifier 20 Volts RDS(on) = 0.16 W VF = 0.39 Volts MOSFET and Schottky Rectifier The FETKY™ product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration.

Independent pin

MMDFS2P102 Features

* FECTIVE TRANSIENT THERMAL RESPONSE D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD) 0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W 0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F AMBIENT 0.01 CHIP JUNCTION 0.001 SINGLE PULSE 0.0001 1.0E

* 05 1.0E

* 04 1.0E