* ecified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The
MMSF3P02HD Datasheet (302.80 KB)
MMSF3P02HD
Motorola
302.80 KB
Single tmos power mosfet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF3P02HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMSF3P02HD.
📁 Related Datasheet
MMSF3P02HD Power MOSFET (ON Semiconductor)
MMSF3P03HD Power MOSFET (ON Semiconductor)
MMSF3P03HD SINGLE TMOS POWER MOSFET (Motorola)
MMSF3205 SINGLE TMOS POWER MOSFET (Motorola)
MMSF3300 SINGLE TMOS POWER MOSFET (Motorola)
MMSF3305 SINGLE TMOS POWER MOSFET (Motorola)
MMSF3350 Single N-Channel MOSFET (ON Semiconductor)
MMSF10N02Z SINGLE TMOS POWER MOSFET (Motorola)
MMSF10N02Z Power MOSFET (ON Semiconductor)
MMSF10N03Z Power MOSFET (ON Semiconductor)
