MRF18030ALR3 Datasheet (Motorola) - RF Power Field Effect Transistors

MRF18030ALR3, RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MRF18030A/D The RF MOSFET Line RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3 Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz.

Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

Specified for GSM 1805 - 1880 MHz.

Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts

MRF18030ALR3 Features

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