MRF18085BLSR3
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF18085B/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
- GSM and GSM EDGE Performance, Full Frequency Band (1930
- 1990 MHz) Power Gain
- 12.5 d B (Typ) @ 85 Watts CW Efficiency
- 50% (Typ) @ 85 Watts CW
- Internally Matched, Controlled Q, for Ease of Use
- High Gain, High Efficiency, and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1d B Output Power, @ f = 1930 MHz
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
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