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MRF18085BLSR3 Datasheet - Motorola

MRF18085BLSR3 RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18085B/D The RF MOSFET Line RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain - 12.5 dB (Typ) @ 85 Watts CW Efficiency - 50% (Typ) @ 85 Watts CW Internally Ma.

MRF18085BLSR3 Features

* ormation On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G 1 2X Q bbb M T A M B

MRF18085BLSR3 Datasheet (610.58 KB)

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Datasheet Details

Part number:

MRF18085BLSR3

Manufacturer:

Motorola

File Size:

610.58 KB

Description:

Rf power field effect transistors.

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MRF18085BLSR3 Power Field Effect Transistors Motorola

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