MRF18085BR3 - RF Power Field Effect Transistors

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Motorola Semiconductor (now NXP Semiconductors)

MRF18085BR3 RF Power Field Effect Transistors by Motorola - Datasheet Preview — Datasheet preview – MRF18085BR3

Datasheet Details

Part number	MRF18085BR3
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	610.58 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF18085BR3 Datasheet
Additional preview pages of the MRF18085BR3 datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18085B/D The RF MOSFET Line RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain - 12.

Published: Jan 2, 2006 |