MRF18085BLSR3
Key Features
- GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain - 12.5 dB (Typ) @ 85 Watts CW Efficiency - 50% (Typ) @ 85 Watts CW
- Internally Matched, Controlled Q, for Ease of Use
- Part: MRF18085BLSR3
- Description: RF Power Field Effect Transistors
- Category: Transistor
- Manufacturer: Motorola Semiconductor
- Size: 610.58 KB