Datasheet4U Logo Datasheet4U.com

MRF18085BLSR3 - RF Power Field Effect Transistors

Download the MRF18085BLSR3 datasheet PDF. This datasheet also covers the MRF18085BR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • ormation On This Product, Go to: www. freescale. com.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF18085BR3_Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18085B/D The RF MOSFET Line RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain - 12.