MRF182S
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF182/D
The RF MOSFET Line
RF Power Field Effect Transistors
N- Channel Enhancement- Mode Lateral MOSFETs
- High Gain, Rugged Device
- Broadband Performance from HF to 1 GHz
- Bottom Side Source Eliminates DC Isolators, Reducing mon Mode Inductances
MRF182 MRF182S
30 W, 1.0 GHz LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs
CASE 360B- 01, STYLE 1 (MRF182)
S CASE 360C- 03, STYLE 1 (MRF182S)
MAXIMUM RATINGS
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 70°C Derate above 70°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 ± 20 74 0.57
- 65 to +150 200 Unit Vdc Vdc W W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.75 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain- Source Breakdown Voltage (VGS =...
