MRF183 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Motorola

MRF183 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF183/D The RF MOSFET Line RF Power Field Effect Transistors N *Channel Enha.

MRF183 Features

* 62 58 54 51 47 44 41 38 37 33 30 28 26 24 21 19 17 14 12 9 9 8 6 4 |S12| 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.016 0.016 0.015 0.015 0.014 0.014 0.013 0.013 0.012 0.011 0.011 0.012 0.012 0.012 0.010 0.009 0.008 0.007 0.007 0.007 0.006 0.006 0.006 0.006 0.005 0.004 0.004 S12 ∠

MRF183 Applications

* at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large
* signal, common source amplifier applications in 28 volt base station equipment.
* Guaranteed Performance at 945 MHz, 28 Volts Output Power
* 45 Watts PEP Power Gain

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Datasheet Details

Part number: MRF183
Manufacturer: Motorola
File Size: 221.20 KB
Datasheet: MRF183_Motorola.pdf
Description: LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

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LATERAL N-CHANNEL BROADBAND POWER MOSFETs Motorola

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