MRF183 Datasheet (Motorola) - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

MRF183, LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF183/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz.

The high gain and broadband performance of these devices makes ithem ideal for large signal, common source amplifier applications in 28 volt base station equipment.

Guaranteed Performance at 945 MHz, 28 Vol

MRF183 Features

* 62 58 54 51 47 44 41 38 37 33 30 28 26 24 21 19 17 14 12 9 9 8 6 4 |S12| 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.016 0.016 0.015 0.015 0.014 0.014 0.013 0.013 0.012 0.011 0.011 0.012 0.012 0.012 0.010 0.009 0.008 0.007 0.007 0.007 0.006 0.006 0.006 0.006 0.005 0.004 0.004 S12 ∠