MRF184
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF184/D
The RF MOSFET Line
RF POWER Field-Effect Transistors
N- Channel Enhancement- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large- signal, mon source amplifier applications in 28 volt base station equipment.
- Guaranteed Performance @ 945 MHz, 28 Volts Output Power = 60 Watts Power Gain = 11.5 d B Efficiency = 53%
- Characterized with Series Equivalent Large- Signal D Impedance Parameters
- S- Parameter Characterization at High Bias Levels
- Excellent Thermal Stability
- Capable of Handling 30:1 VSWR @ 28 Vdc, 945 MHz
MRF184 MRF184S
60 W, 1.0 GHz LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs
CASE 360B- 01, STYLE 1 (MRF184)
CASE 360C- 03, STYLE 1 (MRF184S) S
MAXIMUM RATINGS
Rating Drain- Source Voltage Gate- Source Voltage Drain Current
- Continuous Total Device Dissipation @ TC =...
